DocumentCode :
3535532
Title :
Heterojunction organic thin-film transistors
Author :
Dodabalapur, A. ; Katz, H.E. ; Torsi, L. ; Haddon, R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1995
fDate :
19-21 June 1995
Firstpage :
132
Lastpage :
133
Abstract :
We have developed a unique organic transistor structure which enables us to realize both p-channel and n-channel operation in a single device. This device also demonstrates the applicability of heterojunction concepts to organic semiconductors. The active material consists of two layers: the first layer, typically 10-20 nm thick, is made up of /spl alpha/-hexathienylene (/spl alpha/-6T), a thiophene oligomer which exhibits good p-channel operation. The second active material is C/sub 60/ and is about 20-30 nm thick. The energy levels of the occupied and unoccupied molecular orbitals of /spl alpha/-6T and C/sub 60/ are such that when the gate is biased negatively with respect to the source, the p-channel material is filled with holes and when the gate is biased positively, the n-channel material (C/sub 60/) is filled with electrons. A detailed analysis of the transistor characteristics provides important insights into transport in organic materials and is discussed.
Keywords :
fullerenes; molecular electronics; organic compounds; organic semiconductors; thin film transistors; /spl alpha/-hexathienylene; 10 to 20 nm; 20 to 30 nm; C/sub 60/; energy levels; heterojunction organic thin-film transistors; n-channel operation; occupied molecular orbitals; organic material transport; organic semiconductors; organic transistor structure; p-channel operation; thiophene oligomer; unoccupied molecular orbitals; Charge carrier processes; Dielectric materials; Dielectric substrates; Gold; Heterojunctions; Organic thin film transistors; Thin film transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
Type :
conf
DOI :
10.1109/DRC.1995.496300
Filename :
496300
Link To Document :
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