• DocumentCode
    3535532
  • Title

    Heterojunction organic thin-film transistors

  • Author

    Dodabalapur, A. ; Katz, H.E. ; Torsi, L. ; Haddon, R.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1995
  • fDate
    19-21 June 1995
  • Firstpage
    132
  • Lastpage
    133
  • Abstract
    We have developed a unique organic transistor structure which enables us to realize both p-channel and n-channel operation in a single device. This device also demonstrates the applicability of heterojunction concepts to organic semiconductors. The active material consists of two layers: the first layer, typically 10-20 nm thick, is made up of /spl alpha/-hexathienylene (/spl alpha/-6T), a thiophene oligomer which exhibits good p-channel operation. The second active material is C/sub 60/ and is about 20-30 nm thick. The energy levels of the occupied and unoccupied molecular orbitals of /spl alpha/-6T and C/sub 60/ are such that when the gate is biased negatively with respect to the source, the p-channel material is filled with holes and when the gate is biased positively, the n-channel material (C/sub 60/) is filled with electrons. A detailed analysis of the transistor characteristics provides important insights into transport in organic materials and is discussed.
  • Keywords
    fullerenes; molecular electronics; organic compounds; organic semiconductors; thin film transistors; /spl alpha/-hexathienylene; 10 to 20 nm; 20 to 30 nm; C/sub 60/; energy levels; heterojunction organic thin-film transistors; n-channel operation; occupied molecular orbitals; organic material transport; organic semiconductors; organic transistor structure; p-channel operation; thiophene oligomer; unoccupied molecular orbitals; Charge carrier processes; Dielectric materials; Dielectric substrates; Gold; Heterojunctions; Organic thin film transistors; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1995. Digest. 1995 53rd Annual
  • Conference_Location
    Charlottesville, VA, USA
  • Print_ISBN
    0-7803-2788-8
  • Type

    conf

  • DOI
    10.1109/DRC.1995.496300
  • Filename
    496300