Title :
Comparative analysis of MODFET and MESFET amplifiers
Author :
Sonti, V. J K Kishor ; Kannan, V.
Author_Institution :
Sathyabama Univ., Chennai, India
Abstract :
In this paper, a comparative analysis of MODFET and MESFET amplifiers was carried out. The equivalent circuit model is used for the MESFET amplifier, whereas device simulation model is used for the MODFET amplifier and the gain of the amplifiers was analyzed .In this device simulation 50 ohm resistance is used at the terminations and W = 200 uni, L=0.25um as device dimensions with Vds =15v and Vgs = -3v. In this paper the work is carried out using PSPICE AD simulation software.
Keywords :
HEMT circuits; MESFET circuits; amplifiers; semiconductor device models; MESFET amplifiers; MODFET amplifiers; PSPICE AD simulation software; device simulation model; equivalent circuit model; resistance 50 ohm; voltage -3 V; voltage 15 V; Gallium nitride; HEMTs; Logic gates; MESFETs; MODFETs; Microwave amplifiers; Performance evaluation; AlGaN/GaN; Equivalent Circuit; MESFET; MODFET; gain; transconductance;
Conference_Titel :
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-0071-1
DOI :
10.1109/ICONSET.2011.6168040
