Title :
Improvement of porous silicon EL efficiency during anodic oxidation and the application of a new microstructure analysis method
Author :
Sakai, T. ; Suzuki, T. ; Li Zhang
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The relation between light emitting characteristics and the porous silicon microstructure has been analyzed by applying a new in situ electroluminescence and photoluminescence spectra measurement technique during anodic oxidation. On the basis of this result, a porous silicon structure has been modified to improve /spl nu/ (the external light emission efficiency), and a maximum /spl nu/ of 0.35%, the highest confirmed value ever reported, has been obtained.
Keywords :
anodisation; electroluminescence; elemental semiconductors; photoluminescence; porous materials; silicon; 0.35 percent; EL efficiency; Si; anodic oxidation; electroluminescence spectra; external light emission efficiency; in situ spectra measurement technique; light emitting characteristics; microstructure analysis method; photoluminescence spectra; porous Si; porous silicon microstructure; Etching; Hafnium; Microstructure; Microwave integrated circuits; Nanoscale devices; Oxidation; Research and development; Silicon; Solid state circuits; Wire;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496301
