Title :
Submilliamp-threshold InGaAs/GaAs quantum-well ridge-waveguide lasers with impurity-induced disordering
Author :
Hu, S.Y. ; Peters, M.G. ; Young, D.B. ; Gossard, A.C. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report a significant reduction of threshold current in lasers from a material which has two strained-layer In/sub 0.2/Ga/sub 0.8/As/GaAs QW inside a linearly-graded-index separate-confinement waveguide structure. The ridges were etched by Cl/sub 2/ reactive ion etching. Self-aligned Si deposition and Zn diffusion were used in the device fabrication. The resultant active stripe width was controlled by the Si diffusion time. For example, a 0.3-/spl mu/m-wide active stripe was achieved from the originally 1.5-/spl mu/m-wide device after a 90 min diffusion at 850 C. As a result, threshold currents as low as 0.7 mA for pulsed operation and 0.9 mA for cw operation have been obtained from an uncoated 137-/spl mu/m-long and 0.3-/spl mu/m-wide device without special heat sinking treatment.
Keywords :
III-V semiconductors; diffusion; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 0.3 mum; 0.7 mA; 0.9 mA; 850 C; 90 min; Cl/sub 2/; Cl/sub 2/ reactive ion etching; In/sub 0.2/Ga/sub 0.8/As-GaAs; InGaAs/GaAs quantum-well ridge-waveguide lasers; Si diffusion time; Zn diffusion; active stripe width; cw operation; impurity-induced disordering; linearly-graded-index separate-confinement waveguide structure; pulsed operation; self-aligned Si deposition; strained-layer quantum wells; threshold current reduction; Etching; Gallium arsenide; Indium gallium arsenide; Optical materials; Pulsed laser deposition; Quantum well lasers; Quantum wells; Threshold current; Waveguide lasers; Zinc;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496303
