Title :
Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers
Author_Institution :
AT&T Bell Labs., Breinigsville, PA, USA
Abstract :
Corroboration of a revised view of recombination in 1.3 /spl mu/m InGaAsP lasers is provided by quantitative measurements of the spontaneous emission imaged through substrate metallization windows. These data exhibit sensitivity to the acceptor concentration in the active layer via the dependence of spontaneous emission intensity on the junction voltage. The data demonstrate explicitly the dependence of the spontaneous emission intensity on the excess hole concentration, accurately described by the bimolecular formula, but contrary to the linear dependence inferred from the analysis of uncorrected lifetime data. This analysis constitutes a DC method for estimating the acceptor concentration in bulk-active lasers.
Keywords :
III-V semiconductors; carrier density; carrier lifetime; electron-hole recombination; gallium arsenide; impurity states; indium compounds; semiconductor lasers; spontaneous emission; 1.3 micrometre; DC method; InGaAsP; acceptor concentration; bulk-active lasers; carrier density; carrier lifetime; device impedance; excess hole concentration; junction voltage; recombination; semiconductor lasers; spontaneous emission intensity; substrate metallization windows; Amplitude modulation; Charge carrier density; Charge carrier lifetime; Data analysis; Density measurement; Impedance measurement; Radiative recombination; Spontaneous emission; Voltage; Volume measurement;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496305
