Finite element stress modeling of InGaAsP/InP lasers

Author

Mishkevich, V. ; Jordan, A.S. ; Swaminathan, V. ; Geary, J.M.

Author_Institution

AT&T Bell Labs., Whippany, NJ, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

150

Lastpage

151

Abstract

InGaAsP/InP lasers operating at 1.3/spl mu/m and 1.55/spl mu/m wavelength are used currently in many long haul and local loop communication systems. In addition to demands on the performance characteristics of these lasers, their long-term reliability under the operating conditions should also be satisfactory. Strain is one of many factors that can affect laser reliability. The principal objective of the current work is to construct processing related thermal stresses in InP based laser structures.

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; indium compounds; optical communication equipment; semiconductor device models; semiconductor device reliability; semiconductor lasers; thermal stresses; 1.3 micrometre; 1.55 micrometre; InGaAsP-InP; finite element stress modeling; local loop communication systems; long haul communication systems; long-term reliability; operating conditions; performance characteristics; processing related thermal stresses; Dielectrics; Finite element methods; Geometrical optics; Indium phosphide; Laser modes; Laser theory; Physics; Solid modeling; Tensile stress; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496307

Filename

496307