Imaging spatial and spectral inhomogenous spontaneous emission in high power semiconductor lasers

Author

Bethea, C.G. ; Fang, W. ; Chen, Y.K. ; Chuang, S.L.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

152

Lastpage

153

Abstract

Spectrally and spatially resolved infrared microscopy has been used to study the steady state internal physics of semiconductor laser diodes. By imaging the longitudinal intra-cavity spontaneous emission profiles of both long wavelength bulk and MQW CMBH Fabry-Perot InGaAsP/InP lasers lasing at 1.48/spl mu/m, we observed the longitudinal spatial hole burning above the lasing threshold.

Keywords

Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical hole burning; optical microscopy; semiconductor lasers; spontaneous emission; 1.48 micrometre; Fabry-Perot lasers; InGaAsP-InP; MQW; high power semiconductor lasers; infrared microscopy; inhomogenous spontaneous emission; lasing threshold; longitudinal intra-cavity spontaneous emission; longitudinal spatial hole burning; spatially resolved techniques; spectrally resolved techniques; steady state internal physics; Diode lasers; Fabry-Perot; Infrared spectra; Microscopy; Optical imaging; Physics; Quantum well devices; Spatial resolution; Spontaneous emission; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496308

Filename

496308