Electrostatic discharge (ESD) protection of giant magneto-resistive (GMR) recording heads with a silicon germanium technology

Author

Voldman, Steven ; Luo, Sam ; Nomura, Calvin ; Vannorsdel, Kevin ; Feilchenfeld, Natalie

Author_Institution

IBM Microelectron., Essex Junction, VT, USA

fYear

2004

fDate

19-23 Sept. 2004

Firstpage

1

Lastpage

9

Abstract

Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; giant magnetoresistance; magnetic heads; magnetic recording; magnetoresistive devices; BiCMOS silicon germanium technology; ESD protection; MOSFET; Schottky diodes; electrostatic discharge; giant magneto-resistive recording heads; varactors; BiCMOS integrated circuits; Disk recording; Electrostatic discharge; Germanium silicon alloys; Isolation technology; MOSFETs; Magnetic heads; Magnetic recording; Protection; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.

Conference_Location

Grapevine, TX

Print_ISBN

978-1-5853-7063-4

Electronic_ISBN

978-1-5853-7063-4

Type

conf

DOI

10.1109/EOSESD.2004.5272583

Filename

5272583