Title :
New interpretation of threshold voltage in polysilicon TFTs: a theoretical and experimental study
Author :
Jacunski, M.D. ; Shur, M.S. ; Hack, M.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Abstract :
Discusses the extraction of threshold voltage for n and p channel polysilicon thin film transistors. First, the effect of measurement frequency is investigated, both experimentally and via 2D numerical device simulation. The temporal characteristics ofthe boundary traps are shown to cause a significant positive (negative) shift of the gate to channel capacitance curve for n-channel (p-channel) TFTs as a function of frequency.
Keywords :
capacitance; electron traps; elemental semiconductors; semiconductor device models; silicon; thin film transistors; 2D numerical device simulation; Si; boundary traps; gate to channel capacitance curve; measurement frequency; polysilicon TFTs; temporal characteristics; threshold voltage; Capacitance; Computer hacking; Data mining; Frequency measurement; Grain boundaries; MOSFETs; Numerical simulation; Photonic band gap; Thin film transistors; Threshold voltage;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496310
