Breakdown behavior of TMR head in ESD transients

HBM and D-CDM breakdown testing were preformed on the latest TMR heads of different resistance. Pspice simulations were conducted for individual TMR heads based on their actual failure voltage at HBM and D-CDM, in an attempt to investigate damage current through TMR barrier, as well as voltage across TMR barrier. Results show that in short transient test-HBM and DCDM, damage current threshold (through TMR barrier) is inversely proportional to TMR resistance, while damaging current density threshold sigma_h is a constant in each transient model.