Title :
Development of HDPE/silicon nitride nanocomposites using HDPE-g-dibutyl maleate as compatibilizer
Author :
Deepthi, M.V. ; Sampathkumaran, P. ; Seetharamu, S. ; Vynatheya, S. ; Sailaja, R.R.N.
Author_Institution :
Energy & Resources Inst. (TERI), Bangalore, India
Abstract :
HDPE has been known for its dielectric properties. Thus in this study, attempt has been made to improve the overall performance of HDPE composites by blending silane treated silicon nitride (SN) with HDPE using HDPE-g-dibutyl maleate (HDPE-g-DBM) as compatibilizer. A small quantity of surface modified nanoclay has also been added in order to improve the mechanical properties. The flexural, wear and thermal properties of the composites were measured according to ASTM standards. The results reveal that, both silane modification of SN accompanied by nanoclay addition has led to the substantial enhancement in flexural strength and flexural modulus. In addition, compatibilization has further improved the mechanical properties showing 10% (w/w of SN) as optimal compatibilizer content. The wear results showed that, as SN content increased, the slide wear loss decreased. TGA analysis showed that, the addition of SN along with compatibilizer improved the thermal stability of the nanocomposites.
Keywords :
bending strength; blending; dielectric properties; nanocomposites; polyethylene insulation; silicon compounds; thermal analysis; thermal stability; wear; ASTM standards; HDPE composites; HDPE-g-DBM; HDPE-g-dibutyl maleate; SiN; TGA analysis; compatibilizer; dielectric properties; flexural modulus; flexural strength; mechanical properties; silane blending; silicon nitride nanocomposites; surface modified nanoclay; thermal property; thermal stability; wear property; Abstracts; Hafnium; Nanocomposites; Standards; Tin; USA Councils; Flexural; HDPE; Nanocomposites; Silicon nitride; Thermal properties; Wear;
Conference_Titel :
Properties and Applications of Dielectric Materials (ICPADM), 2012 IEEE 10th International Conference on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4673-2852-4
DOI :
10.1109/ICPADM.2012.6318959