Title :
Improved wafer-level VFTLP system and investigation of device turn-on effects
Author :
Li, Junjun ; Hyvonen, Sami ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150 ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.
Keywords :
MOS integrated circuits; oscilloscopes; power dividers; voltage measurement; NMOSFET; broadband power divider; device turn-on effect; high pulse voltage measurement; oscilloscope; pulse amplitude; wafer-level VFTLP measurement system; Distortion measurement; Electrostatic discharge; Impedance; Oscilloscopes; Probes; Pulse measurements; Radio frequency; Switches; Transmission line measurements; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location :
Grapevine, TX
Print_ISBN :
978-1-5853-7063-4
Electronic_ISBN :
978-1-5853-7063-4
DOI :
10.1109/EOSESD.2004.5272590
