Title :
Optimization of the tunnel MIS structure as a hot electron injector
Author :
Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inversion base-due to high current gain and bistability of its output characteristics.
Keywords :
Auger effect; MIS structures; aluminium; bipolar transistors; elemental semiconductors; hot carriers; inversion layers; silicon; silicon compounds; tunnel transistors; Al-SiO/sub 2/-Si; Auger transistor; MIS emitter; bipolar transistor; bistability; current gain; hot electron injector; inversion base; output characteristics; tunnel MIS structure; Electrons;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496314
