A CMOS technology roadmap for the next fifteen years

Author

Ning, Tak H.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1995

fDate

6-10 Nov 1995

Firstpage

1

Lastpage

4

Abstract

A technology roadmap for semiconductors, which forecasts CMOS technology for the next 15 years, was published recently by the SIA in the USA. A major goal of the roadmap is to provide a guide that can be used for R&D investment decisions and selection of roles by R&D organizations. The roadmap development process, the principal technology characteristics, as well as the key assumptions and major technical issues are discussed. Areas of focused development will include scaling with power supply voltage reduction, power dissipation reduction, transient-current reduction, and SOI CMOS technology

Keywords

CMOS integrated circuits; economics; integrated circuit manufacture; integrated circuit technology; investment; research and development management; silicon-on-insulator; technological forecasting; CMOS technology roadmap; R&D investment decisions; R&D organizations; SIA; SOI CMOS technology; power dissipation reduction; power supply voltage reduction; roadmap development process; transient-current reduction; Application specific integrated circuits; CMOS technology; Educational institutions; Government; Integrated circuit technology; Lithography; Power supplies; Random access memory; Research and development; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496318

Filename

496318