Title :
A CMOS technology roadmap for the next fifteen years
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A technology roadmap for semiconductors, which forecasts CMOS technology for the next 15 years, was published recently by the SIA in the USA. A major goal of the roadmap is to provide a guide that can be used for R&D investment decisions and selection of roles by R&D organizations. The roadmap development process, the principal technology characteristics, as well as the key assumptions and major technical issues are discussed. Areas of focused development will include scaling with power supply voltage reduction, power dissipation reduction, transient-current reduction, and SOI CMOS technology
Keywords :
CMOS integrated circuits; economics; integrated circuit manufacture; integrated circuit technology; investment; research and development management; silicon-on-insulator; technological forecasting; CMOS technology roadmap; R&D investment decisions; R&D organizations; SIA; SOI CMOS technology; power dissipation reduction; power supply voltage reduction; roadmap development process; transient-current reduction; Application specific integrated circuits; CMOS technology; Educational institutions; Government; Integrated circuit technology; Lithography; Power supplies; Random access memory; Research and development; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496318
