DocumentCode
3535758
Title
Advanced ESD rail clamp network design for high voltage CMOS applications
Author
Stockinger, Michael ; Miller, James W.
Author_Institution
Freescale Semicond., Austin, TX, USA
fYear
2004
fDate
19-23 Sept. 2004
Firstpage
1
Lastpage
9
Abstract
We present a new boosted and distributed ESD rail clamp protection approach for high voltage CMOS applications using stacked active MOSFET rail clamps and provide design guidelines for practical pad ring scenarios. This approach offers improved ESD robustness, area compactness, layout modularity, process portability, scalability, and ease of simulation.
Keywords
CMOS integrated circuits; MOSFET; electrostatic discharge; integrated circuit design; integrated circuit layout; power integrated circuits; power semiconductor devices; ESD rail clamp network design; area compactness; distributed ESD rail clamp protection; high voltage CMOS applications; layout modularity; pad ring scenarios; process portability; scalability; stacked active MOSFET rail clamps; Anodes; Clamps; Design methodology; Electrostatic discharge; MOSFET circuits; Protection; Rails; Robustness; Variable structure systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location
Grapevine, TX
Print_ISBN
978-1-5853-7063-4
Electronic_ISBN
978-1-5853-7063-4
Type
conf
DOI
10.1109/EOSESD.2004.5272599
Filename
5272599
Link To Document