• DocumentCode
    3535775
  • Title

    Some scaling issues in the active voltage control of IGBT modules for high power applications

  • Author

    Palmer, R. ; Githiari, A.N. ; Leedham, R.J.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • Volume
    2
  • fYear
    1997
  • fDate
    22-27 Jun 1997
  • Firstpage
    854
  • Abstract
    The operation of an IGBT in its active region is a well established technique for handling short circuits, and also for voltage and dv/dt control. One important application of this technique is in the series operation of IGBTs, where voltage controllers can automatically ensure voltage sharing. In this paper we address some specific issues encountered in extending the method to large IGBT modules for high power applications. In applying the method to high power circuits, the scaling of the IGBT´s internal capacitances, and other parasitic components is the main aspect that must be given particular consideration
  • Keywords
    capacitance; insulated gate bipolar transistors; modules; voltage control; IGBT modules; active voltage control; high power applications; internal capacitances scaling; parasitic components; short circuits; voltage controllers; voltage sharing; Automatic voltage control; Capacitance; Circuits; Costs; Delay; Insulated gate bipolar transistors; Power engineering and energy; Protection; Switching loss; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
  • Conference_Location
    St. Louis, MO
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-3840-5
  • Type

    conf

  • DOI
    10.1109/PESC.1997.616820
  • Filename
    616820