DocumentCode :
3535775
Title :
Some scaling issues in the active voltage control of IGBT modules for high power applications
Author :
Palmer, R. ; Githiari, A.N. ; Leedham, R.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Volume :
2
fYear :
1997
fDate :
22-27 Jun 1997
Firstpage :
854
Abstract :
The operation of an IGBT in its active region is a well established technique for handling short circuits, and also for voltage and dv/dt control. One important application of this technique is in the series operation of IGBTs, where voltage controllers can automatically ensure voltage sharing. In this paper we address some specific issues encountered in extending the method to large IGBT modules for high power applications. In applying the method to high power circuits, the scaling of the IGBT´s internal capacitances, and other parasitic components is the main aspect that must be given particular consideration
Keywords :
capacitance; insulated gate bipolar transistors; modules; voltage control; IGBT modules; active voltage control; high power applications; internal capacitances scaling; parasitic components; short circuits; voltage controllers; voltage sharing; Automatic voltage control; Capacitance; Circuits; Costs; Delay; Insulated gate bipolar transistors; Power engineering and energy; Protection; Switching loss; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location :
St. Louis, MO
ISSN :
0275-9306
Print_ISBN :
0-7803-3840-5
Type :
conf
DOI :
10.1109/PESC.1997.616820
Filename :
616820
Link To Document :
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