DocumentCode
3535808
Title
Polysilicon structures for shear stress sensors
Author
Jiang, Fukang ; Tai, Yu-Chong ; Huang, Jin-Biao ; Ho, Chih-Ming
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear
1995
fDate
6-10 Nov 1995
Firstpage
12
Lastpage
15
Abstract
Four types of micromachined polysilicon structures have been designed and fabricated for wall shear stress sensors in flow measurement and control. Their frequency responses, heat transfer characteristics and wind-tunnel responses have been extensively studied. They are all useful but one may be better than the others depending on the application requirement
Keywords
elemental semiconductors; flow measurement; frequency response; microsensors; silicon; Si; flow measurement; frequency responses; heat transfer characteristics; micromachined polysilicon structures; polysilicon structures; wall shear stress sensors; wind-tunnel responses; Bridges; Etching; Fabrication; Mechanical sensors; Stress control; Stress measurement; Substrates; Thermal sensors; Thermal stresses; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496323
Filename
496323
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