Fabrication and its response characteristics of MELO accelerometer

Author

Pak, James Jungho ; Yi, Seung H. ; Sung, Young K. ; Neudeck, Gerold W.

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

1995

fDate

6-10 Nov 1995

Firstpage

32

Lastpage

35

Abstract

This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting in a local silicon-on-insulator (SOI) structure, resulting in high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30 g

Keywords

accelerometers; epitaxial growth; microsensors; piezoresistive devices; silicon-on-insulator; 2.026 kHz; MELO accelerometer; SOI structure; Si; fabrication; low-doped single crystal silicon; merged epitaxial lateral overgrowth; piezoresistive bridge-type accelerometer; response characteristics; selective epitaxial growth; suspension beams; Accelerometers; Biomembranes; Bridges; Epitaxial growth; Etching; Fabrication; Intelligent sensors; Piezoresistance; Silicon; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496328

Filename

496328