Design and characterization of a micro strain gauge

Author

Lo, Tomy C P ; Chan, Philip C.H. ; Tang, Zhenan

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

36

Lastpage

39

Abstract

Silicon piezoresistive stress sensors are used to measure stress on a plastic-encapsulated silicon die. These sensors are conventionally fabricated onto the surface of silicon integrated circuit die as part of the normal processing procedure. Since they can also be used over a wide temperature range after calibration, thermally-induced stresses can be measured. A four-point bending (4PB) stress fixture was used in calibration experiments. The results between the four-point resistance measurement and two-point resistance measurement of the strain gauges were compared. The problem in the calibration process was discussed

Keywords

calibration; microsensors; piezoresistive devices; silicon; strain gauges; strain measurement; thermal stresses; Si; calibration; design; fabrication; four-point bending; four-point resistance measurement; integrated circuit; micro strain gauge; plastic-encapsulated silicon die; silicon piezoresistive stress sensor; stress measurement; thermal stresses; two-point resistance measurement; Calibration; Capacitive sensors; Electrical resistance measurement; Integrated circuit measurements; Piezoresistance; Sensor phenomena and characterization; Silicon; Stress measurement; Surface resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496329

Filename

496329