DocumentCode
3535902
Title
A new charge pumping model for polysilicon thin film transistors
Author
Kim, Kee-Jong ; Kim, Seong-Gyun ; Park, Won-Kyu ; Kim, Ohyun
Author_Institution
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
fYear
1995
fDate
6-10 Nov 1995
Firstpage
48
Lastpage
51
Abstract
A charge pumping model considering bulk states in polysilicon thin film transistors has been developed. Here, we define the threshold voltage as a minimum voltage to fill the untrapped states within an applied pulse width. And the threshold voltage including the emission energy level was obtained as a function of depth. It shows that the calculated current of this model is more consistent with the measured one rather than the current or interface state model
Keywords
elemental semiconductors; semiconductor device models; silicon; thin film transistors; Si; bulk states; charge pumping model; current; electron trapping; emission energy levels; polysilicon thin film transistor; threshold voltage; Charge carrier processes; Charge pumps; Electron traps; Energy states; Interface states; MOSFETs; Space vector pulse width modulation; Tail; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496332
Filename
496332
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