Title :
Off-current characteristics of conductivity modulated TFT
Author :
Anish Kumar, K.P. ; Sin, Johnny K O
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
This paper reports the leakage current characteristics of Conductivity Modulated Thin Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. The devices were fabricated using a low temperature process (620°C) which is highly desirable for large area electronic applications
Keywords :
MOSFET; elemental semiconductors; leakage currents; silicon; thin film transistors; 620 C; I-V characteristics; Si; conductivity modulated TFT; current-voltage characteristics; large area electronic applications; leakage current characteristics; low temperature fabrication process; offcurrent characteristics; offset region; on-state resistance reduction; polycrystalline Si; polysilicon; thin film transistor; Charge carrier processes; Conductivity; Implants; Leakage current; Optical films; Silicon; Substrates; Temperature; Thin film transistors; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496333
