PL study of (Al,Ga)As epilayers grown on (100), (111)B and vicinal (111)B GaAs substrates

Author

Kuang, Guokui ; Wang, Zhanguo ; Liang, Jibeng ; Xu, Bo ; Zhu, Zhanping ; Zou, Lyu-fan

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1995

fDate

6-10 Nov 1995

Firstpage

71

Lastpage

72

Abstract

For the first time, we have grown (Al,Ga)As/GaAs epilayers which show some remarkable quantum wire characteristics-red shift as much as 98 meV-on vicinal (111)B GaAs substrate. For comparison, the epilayers were also deposited on (100) and (111)B substrates simultaneously. But the PL results of these three samples are very different-we explained these PL results with a model based on growth dynamics and drew a conclusion that steps on (111)B surface can play a very important role in crystal growth

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; (100) substrate; (111)B substrate; (Al,Ga)As epilayers; AlGaAs-GaAs; GaAs substrates; crystal growth; growth dynamics; photoluminescence; quantum wire; red shift; surface steps; vicinal (111)B substrate; Aluminum alloys; Gallium arsenide; Laser excitation; Superlattices; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496338

Filename

496338