DocumentCode :
3535980
Title :
Electro-absorption and refraction at 1.5 μm in InGaAs/AlGaAs superlattice growth on GaAs substrate
Author :
Chan, Michael C Y ; Li, E.H. ; Chan, K.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fYear :
1995
fDate :
6-10 Nov 1995
Firstpage :
77
Lastpage :
80
Abstract :
High indium concentration In0.65Ga0.35As/Al 0.33Ga0.67As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 μm optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; electroabsorption; gallium arsenide; indium compounds; refractive index; semiconductor superlattices; 1.5 micron; GaAs; GaAs substrate; In0.65Ga0.35As-Al0.33Ga0.67 As; InGaAs/AlGaAs superlattice growth; absorption coefficient; electro-absorption; electro-refraction; fiber optic systems; loss; modulators; optical communications; optical parameters; refractive index; Absorption; Gallium arsenide; Indium gallium arsenide; Optical fiber communication; Optical fiber losses; Optical fibers; Optical modulation; Optical refraction; Optical superlattices; Optical variables control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
Type :
conf
DOI :
10.1109/TENCON.1995.496340
Filename :
496340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3535980
بازگشت