Electro-absorption and refraction at 1.5 μm in InGaAs/AlGaAs superlattice growth on GaAs substrate

Author

Chan, Michael C Y ; Li, E.H. ; Chan, K.S.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

77

Lastpage

80

Abstract

High indium concentration In_0.65Ga_0.35As/Al _0.33Ga_0.67As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 μm optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; electroabsorption; gallium arsenide; indium compounds; refractive index; semiconductor superlattices; 1.5 micron; GaAs; GaAs substrate; In_0.65Ga_0.35As-Al_0.33Ga_0.67As; InGaAs/AlGaAs superlattice growth; absorption coefficient; electro-absorption; electro-refraction; fiber optic systems; loss; modulators; optical communications; optical parameters; refractive index; Absorption; Gallium arsenide; Indium gallium arsenide; Optical fiber communication; Optical fiber losses; Optical fibers; Optical modulation; Optical refraction; Optical superlattices; Optical variables control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496340

Filename

496340