DocumentCode
3535987
Title
Gate oxide failures due to anomalous stress from HBM ESD testers
Author
Duvvury, Charvaka ; Steinhoff, Robert ; Boselli, Gianluca ; Reddy, Vijay ; Kunz, Hans ; Marum, Steve ; Cline, Roger
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
2004
fDate
19-23 Sept. 2004
Firstpage
1
Lastpage
9
Abstract
An unexpected and serious effect from the ESD HBM tester causing gate oxide failure in input buffers is reported in this paper. The most significant finding is that this unwarranted stress comes from the tester relay and gives rise to false HBM evaluation. In this paper we investigate this new effect on gate oxide reliability and establish the safe control limits for proper output of the state-of-the-art ESD simulator waveforms.
Keywords
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; CMOS technology; HBM ESD testers; anomalous stress; gate oxide failures; gate oxide reliability; input buffers; state-of-the-art ESD simulator waveforms; tester relay; CMOS logic circuits; CMOS technology; Degradation; Electrostatic discharge; Instruments; Logic devices; Protection; Stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location
Grapevine, TX
Print_ISBN
978-1-5853-7063-4
Electronic_ISBN
978-1-5853-7063-4
Type
conf
DOI
10.1109/EOSESD.2004.5272621
Filename
5272621
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