Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides

Author

Li, Alex T H ; Lo, E.M. ; Li, E.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

85

Lastpage

88

Abstract

The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; impurities; indium compounds; optical fabrication; optical waveguides; semiconductor quantum wells; AlGaAs-GaAs; Fourier decomposition; InGaAs-GaAs; field profile; impurity induced disordering; lateral optical confinement; modal propagation constant; quantum well waveguides; single mode operation; Gallium arsenide; Impurities; Indium gallium arsenide; Optical device fabrication; Optical refraction; Optical variables control; Optical waveguides; Partial differential equations; Propagation constant; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496342

Filename

496342