Title :
Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application
Author :
Vashchenko, V.A. ; Kindt, W. ; Beek, M. Ter ; Hopper, P.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.
Keywords :
BiCMOS integrated circuits; automotive electronics; electrostatic discharge; thin film resistors; 60 V tolerant on-chip protection; BiCMOS process; automotive application circuits; blocked N-isolation layer; breakdown voltage; device numerical simulation; dual-direction ESD protection approach; experimental measurements; thin film resistors; voltage 5 V; voltage 60 V; Automotive applications; BiCMOS integrated circuits; Breakdown voltage; Current measurement; Diodes; Electrostatic discharge; Numerical simulation; Protection; Resistors; Semiconductor device measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location :
Grapevine, TX
Print_ISBN :
978-1-5853-7063-4
Electronic_ISBN :
978-1-5853-7063-4
DOI :
10.1109/EOSESD.2004.5272623
