Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application

Author

Vashchenko, V.A. ; Kindt, W. ; Beek, M. Ter ; Hopper, P.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

2004

fDate

19-23 Sept. 2004

Firstpage

1

Lastpage

8

Abstract

A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.

Keywords

BiCMOS integrated circuits; automotive electronics; electrostatic discharge; thin film resistors; 60 V tolerant on-chip protection; BiCMOS process; automotive application circuits; blocked N-isolation layer; breakdown voltage; device numerical simulation; dual-direction ESD protection approach; experimental measurements; thin film resistors; voltage 5 V; voltage 60 V; Automotive applications; BiCMOS integrated circuits; Breakdown voltage; Current measurement; Diodes; Electrostatic discharge; Numerical simulation; Protection; Resistors; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.

Conference_Location

Grapevine, TX

Print_ISBN

978-1-5853-7063-4

Electronic_ISBN

978-1-5853-7063-4

Type

conf

DOI

10.1109/EOSESD.2004.5272623

Filename

5272623