Vertical-cavity surface-emitting semiconductor lasers with diffused quantum wells

Author

Lo, C.W. ; Yu, S.F. ; Li, E.H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

93

Lastpage

94

Abstract

A self-consistent dynamic model is developed including the current distribution, carrier diffusion rate and spatial hole burning effects to investigate the modulation response of vertical-cavity surface-emitting lasers with diffused quantum wells structure. It is found that the overall performance including relaxation oscillation frequency and modulation bandwidth is improved

Keywords

diffusion; laser theory; optical hole burning; optical modulation; quantum well lasers; semiconductor device models; surface emitting lasers; carrier diffusion; current distribution; diffused quantum wells; modulation bandwidth; relaxation oscillation frequency; self-consistent dynamic model; spatial hole burning; vertical-cavity surface-emitting semiconductor lasers; Current distribution; Laser modes; Optical refraction; Optical scattering; Optical variables control; Quantum well lasers; Refractive index; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496344

Filename

496344