DocumentCode
3536070
Title
1/f bulk phenomena noise theory for GaAs MESFETs
Author
Yan, K.T. ; Forbes, Leonard
fYear
1995
fDate
6-10 Nov 1995
Firstpage
111
Lastpage
114
Abstract
A 1/f noise model based on the distributed equivalent circuit technique for evaluating the semi-insulating substrate is proposed. Our model shows that the 1/f noise is a bulk phenomena with localized high frequency variations and long range low frequency fluctuations with the lowest frequency being constrained by the thickness of the material
Keywords
1/f noise; III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; semiconductor device noise; 1/f bulk phenomena noise theory; 1/f noise model; GaAs; MESFETs; distributed equivalent circuit technique; localized HF variations; long range LF fluctuations; semi-insulating substrate; Circuit noise; Fluctuations; Frequency; Gallium arsenide; Impedance; Low-frequency noise; MESFETs; Semiconductor device noise; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496349
Filename
496349
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