• DocumentCode
    3536091
  • Title

    Spin-filtering of non-equilibrium holes in a semiconductor-ferromagnet hybrid structure

  • Author

    Haq, E. ; Banerjee, T. ; Siekman, M.H. ; Lodder, J.C. ; Jansen, R.

  • Author_Institution
    MESA Inst. for Nanotechnol., Twente Univ., Enschede, Netherlands
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1201
  • Lastpage
    1202
  • Abstract
    Although spin-dependent transmission of hot electrons has been well addressed, the complementary spin-transport of non-equilibrium holes (below the Fermi level) has never been studied. Using a semiconductor/ferromagnet hybrid structure, it is shown here that a thin ferromagnetic film acts as an efficient spin-filter for holes. This has important implications not only in understanding several non-equilibrium phenomena, but also in realizing complementary building blocks for use in spintronics. To investigate hole spin transport, Ballistic Hole Magnetic Microscopy (BHMM) has been developed. Here, the tip of an STM is positively biased such that unpolarized hot holes are injected into a ferromagnetic metal stack grown on top of a p-type Si semiconductor. A Schottky contact between Au and p-Si acts as the collector energy barrier for the transmitted holes. Hot hole transport with energies of 0.3 to 2 eV below the Fermi level has been studied for a p-Si/Au/Co stack with varying Co thickness. The hole attenuation length has been found to be short and increases from 6-10 Å in the energy range 0.8-2 eV. For a NiFe/Au/Co trilayer, the hole transmission is clearly spin dependent with a large magnetocurrent (MC) of 130%.
  • Keywords
    Fermi level; Schottky barriers; ballistic transport; cobalt; elemental semiconductors; ferromagnetic materials; galvanomagnetic effects; gold; hot carriers; iron alloys; magnetic force microscopy; magnetic multilayers; magnetic thin films; metallic thin films; nickel alloys; scanning tunnelling microscopy; semiconductor-metal boundaries; silicon; spin polarised transport; 0.3 to 2 eV; 6 to 10 angstrom; Fermi level; NiFe-Au-Co; NiFe/Au/Co trilayer; STM tip; Schottky contact; Si-Au-Co; ballistic hole magnetic microscopy; collector energy barrier; ferromagnetic metal stack; hole attenuation length; hole spin transport; hot hole transport; magnetocurrent; nonequilibrium holes; p-type Si semiconductor; semiconductor-ferromagnet hybrid structure; spin-filtering; spintronics; thin ferromagnetic film; unpolarized hot holes; Attenuation; Charge carrier processes; Energy barrier; Gold; Hot carriers; Magnetic films; Magnetoelectronics; Micromagnetics; Schottky barriers; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464030
  • Filename
    1464030