Sub-micro size spin-valve transistor

In this work, the microstructure of the SVT by a lift-off process using E-beam lithography is defined. This will contribute to the research of the micro size spin transistor. SEM was used to image the structure of the SVT. The structure of the pseudo spin-valve (PSV) with a MR of 3% is Py (3 nm)/Co (1 nm)/Cu (5 nm)/Co (3 nm), where Py stands for Ni₈₀Fe₂₀. All corresponding films are thermally deposited by e-gun evaporation on a Si(100) substrate which is prefabricated a p-n junction. The p-n junction is fabricated by a standard CVD technique. The collector current (Ic) and magnetocurrent (MC) versus applied magnetic field in the common collector circuitry at room temperature operation is measured. The SVT gives the collector current of 147.8 μA at magnetically parallel state and 119.4 μA at magnetically anti-parallel state. The corresponding MC is roughly 24 %, The MC is defined by (I_C,P - I_C,AP)/I_C,AP, and the subscripts of P and AP denote the parallel and anti-parallel magnetic configuration in the pseudo spin-valve. The emitter current is 20.5 mA and the transfer ratio (I_B/I_C) is 7.2 E-3.