DocumentCode
3536124
Title
Nano-transient current and transient resistance on the conductive or dissipative materials for extremely sensitive devices
Author
Suzuki, Kouichi ; Sato, Michio
Author_Institution
Fab Solutions, Inc., Kawasaki, Japan
fYear
2004
fDate
19-23 Sept. 2004
Firstpage
1
Lastpage
8
Abstract
Conductive and dissipative implements are used to guard extremely sensitive devices against electrostatic discharge. We developed the methods of IV characteristic, nano transient current and transient resistance from basic theory and evaluated the implements. Consequently, almost all the carbon molecules mixed implements are characterized by linearity, resistance, surface potential and breakdown. Also, the suitable resistance of conductive implements can be derived from the excessive mobile charge criteria. At present, almost all the implements cannot guard devices against the charged device model event. However, the theory and methods will derive the suitable and realizable resistance for implement and device makers.
Keywords
absorbing media; conducting materials; electrostatic discharge; semiconductor device breakdown; semiconductor device testing; transients; CDM events; charged device model events; conductive materials; dissipative materials; electrostatic discharge; extremely sensitive devices; nanotransient current; transient resistance; Charge measurement; Conducting materials; Current measurement; Electrical resistance measurement; Electron devices; Electrostatic discharge; Immune system; Nanoscale devices; Surface resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location
Grapevine, TX
Print_ISBN
978-1-5853-7063-4
Electronic_ISBN
978-1-5853-7063-4
Type
conf
DOI
10.1109/EOSESD.2004.5272639
Filename
5272639
Link To Document