• DocumentCode
    3536124
  • Title

    Nano-transient current and transient resistance on the conductive or dissipative materials for extremely sensitive devices

  • Author

    Suzuki, Kouichi ; Sato, Michio

  • Author_Institution
    Fab Solutions, Inc., Kawasaki, Japan
  • fYear
    2004
  • fDate
    19-23 Sept. 2004
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Conductive and dissipative implements are used to guard extremely sensitive devices against electrostatic discharge. We developed the methods of IV characteristic, nano transient current and transient resistance from basic theory and evaluated the implements. Consequently, almost all the carbon molecules mixed implements are characterized by linearity, resistance, surface potential and breakdown. Also, the suitable resistance of conductive implements can be derived from the excessive mobile charge criteria. At present, almost all the implements cannot guard devices against the charged device model event. However, the theory and methods will derive the suitable and realizable resistance for implement and device makers.
  • Keywords
    absorbing media; conducting materials; electrostatic discharge; semiconductor device breakdown; semiconductor device testing; transients; CDM events; charged device model events; conductive materials; dissipative materials; electrostatic discharge; extremely sensitive devices; nanotransient current; transient resistance; Charge measurement; Conducting materials; Current measurement; Electrical resistance measurement; Electron devices; Electrostatic discharge; Immune system; Nanoscale devices; Surface resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
  • Conference_Location
    Grapevine, TX
  • Print_ISBN
    978-1-5853-7063-4
  • Electronic_ISBN
    978-1-5853-7063-4
  • Type

    conf

  • DOI
    10.1109/EOSESD.2004.5272639
  • Filename
    5272639