DocumentCode
3536164
Title
1/f noise in spin transistors
Author
Hwang, Y.T. ; Lin, M.C. ; Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Huang, H.L.
Author_Institution
Opto-Electron. & Syst. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2005
fDate
4-8 April 2005
Firstpage
1213
Lastpage
1214
Abstract
The model of 1/f noise for a spin transistor have been studied. The sources of the 1/f noise have been differentiated into two. One source is from the PN junction with the major contributor of recombination, and the other from the giant magnetoresistance multilayer. Actual data was measured on a spin transistor while doing a simulation of the 1/f noise. The measured data matches the output of the simulations.
Keywords
1/f noise; giant magnetoresistance; magnetic multilayers; p-n junctions; thin film transistors; 1/f noise; PN junction; giant magnetoresistance; multilayer; spin transistors; Circuit noise; Computational modeling; Equivalent circuits; Fabrication; Frequency measurement; Knee; Noise measurement; Nonhomogeneous media; Thin film circuits; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1464036
Filename
1464036
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