• DocumentCode
    3536172
  • Title

    The sensitivity of pure and doped TlBr crystals

  • Author

    Gazizov, I.M. ; Zaletin, V.M.

  • Author_Institution
    JSC Inst. in Phys.-Tech. Problems, Dubna, Russia
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    3704
  • Lastpage
    3708
  • Abstract
    The sensivity of TlBr detectors to 137Cs gamma-ray in dose rate range from 0,033 Gy/min to 3,84 Gy/min has studied in current mode. The pure and doped crystals have grown by the Bridgman-Stockbarger technique in various atmospheres: vacuum, in the vapor of bromine, in an atmosphere of hydrogen and air. Mass fraction of Pb or Ca introduced in the doped TlBr crystals was 1-10 ppm and 150 ppm respectively. The parameters of the carriers transport μτ have calculated. Photocurrent measurements performed on crystal TlBr have demonstrated high sensitivity to 137Cs γ-radiation. The sensitivity of samples for all investigated crystals was in the range from 0,15×10-6 C / Gy to 10×10-6 C / Gy. Most specific sensitivity 9,0×10-7 C / Gy mm2 at a voltage of 10 V has been obtained on the samples made of pure crystals grown in vacuum, the value of μτ for these was found to be 4,3×10-4 cm2 V-1. The growing atmosphere and the degree of doping have a significant impact on the sensitivity TlBr samples and the dependence of the photocurrent on dose rate. The results are explained by the formation of donor-acceptor pairs associated with cationic vacancies Vc- and anionic Va+ vacancies, as well as complexes {Pb2+ Vc-}, controlling recombination in TlBr.
  • Keywords
    calcium; carrier mobility; crystal growth from melt; doping profiles; gamma-ray apparatus; gamma-ray detection; lead; photoconductivity; semiconductor counters; semiconductor doping; thallium compounds; vacancies (crystal); wide band gap semiconductors; 137Cs gamma-rays; Bridgman-Stockbarger crystal growth technique; TlBr; TlBr detector sensitivity; TlBr:Ca; TlBr:Pb; bromine vapor atmosphere crystal growth; calcium impurity; carrier transport parameters; cationic vacancies; donor-acceptor pair formation; doped TlBr crystal sensitivity; hydrogen-air atmosphere crystal growth; lead impurity; photocurrent dose rate dependence; photocurrent measurements; pure TlBr crystal sensitivity; vacuum crystal growth; Atmosphere; Crystals; Detectors; Impurities; Lead; Photoconductivity; Sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5874504
  • Filename
    5874504