Title :
Efficiency measurement on 6.0 cm3 3-D CdZnTe detectors
Author :
Yang, Hao ; Zhang, Feng ; Zhu, Yuefeng ; He, Zhong
Author_Institution :
Dept. of Nucl. Eng. & Radiol. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
This work investigate the full energy and total efficiencies of large volume CdZnTe detectors. The efficiencies of three 20 mm × 20 mm × 15 mm pixelated CdZnTPe detectors were measured using the H3Dv2 Application Specific Integrated Circuit (ASIC) readout system developed by Brookhaven National Laboratory with un-collimated 241Am, 137Cs, and 60Co sources. One detector was made by eV-Products while the other two were manufactured by Redlen Technologies. Geant4 simulation results are used as the benchmark. The relative efficiency, defined as the ratio between the measured efficiency and the simulated efficiency, is an indicator of the active volume in the detector. The total relative efficiency is close to 100% for all three sources. However, there are deficits on full energy efficiency at higher energies, especially for 60Co. This loss of full energy efficiency could be due to distorted electric field near the detector side surfaces. Our measurements showed that Redlen detectors have similar efficiency with that of eV-Products detector. The active volume of each detector is more than 90%.
Keywords :
application specific integrated circuits; high energy physics instrumentation computing; readout electronics; semiconductor counters; 137Cs source; 241Am source; 60Co source; CdZnTe; Geant4 simulation; H3Dv2 ASIC readout system; Redlen detectors; application specific integrated circuit; eV-products detector; electric field; pixelated CdZnTPe detectors; Application specific integrated circuits; Cathodes; Detectors; Electric fields; Energy resolution; Image edge detection; Pixel;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5874513