• DocumentCode
    3536281
  • Title

    Analysis of system-dependent factors affecting pixelated CdZnTe detector performance through simulation

  • Author

    Kim, J.C. ; Kaye, W. ; Zhang, F. ; He, Z.

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    3759
  • Lastpage
    3764
  • Abstract
    Charge sharing and weighting potential cross-talk between pixels are important factors that degrade the energy resolution in multiple-pixel events. However, simulation studies indicate that these factors cannot fully explain the measured energy resolution degradation for multiple-pixel events nor the Compton image distortion observed in some detector systems. This work presents simulation-based analysis of additional factors that degrade the performance of pixelated CdZnTe detectors coupled to the Gamma Medica Ideas (GMI) VAS UM/TAT4 ASIC and the H3Dv2 ASIC from Brookhaven National Laboratory (BNL). The peak-hold circuitry in the GMI ASIC cannot properly hold the signal amplitude while the BNL ASIC does not have this problem. The impact of this peak-hold drop on the energy resolution is studied for multiple-pixel events and a calibration technique to overcome this effect is validated. Many CdZnTe detectors have non-uniform performance on a pixel-by-pixel basis. The impact of single-pixel energy resolution non-uniformity is studied for multiple-pixel events. The GMI ASIC uses a simple threshold time pick-off with the common start of the system triggered by the cathode, while the BNL ASIC uses the peaking time with the common start triggered by the anode. The impacts of these schemes are isolated and analyzed through simulation. Overall, the simulation package considers gamma-ray interactions within the CdZnTe crystal, charge induction, electronic noise, pulse shaping, peak-hold drop and ASIC triggering procedures. The simulation package considers different timing pick-off techniques for both the GMI VAS UM/TAT4 ASIC and the H3Dv2 ASIC.
  • Keywords
    II-VI semiconductors; application specific integrated circuits; cadmium compounds; crosstalk; gamma-ray apparatus; nuclear electronics; peak detectors; readout electronics; semiconductor counters; trigger circuits; ASIC triggering procedures; CdZnTe; Compton image distortion; H3Dv2 ASIC; VAS UM-TAT4 ASIC; calibration technique; charge induction; charge sharing; detector energy resolution; electronic noise; energy resolution degradation; gamma-ray interactions; interpixel weighting potential crosstalk; multiple pixel events; peak hold circuitry; peak hold drop; pixelated CdZnTe detector performance; pulse shaping; simulation based analysis; single pixel energy resolution nonuniformity; system dependent factors; Anodes; Application specific integrated circuits; Detectors; Energy measurement; Energy resolution; Pixel; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5874514
  • Filename
    5874514