Title :
Deep-submicron MOSFET modeling for circuit simulation
Author :
Jeng, Min-Chie ; Liu, Zhihong ; Cheng, Yuhua
Author_Institution :
Cadence Design Syst. Inc., San Jose, CA, USA
Abstract :
This paper describes recent activities and trends in MOSFET modeling. Both the DC and AC aspects of MOSFET models are covered. Due to the more stringent requirements, test procedures for both analog and digital applications have been proposed. Existing SPICE models are evaluated against these tests. In particular, BSIM3 and MOS9, the two mostly discussed candidates for the standard deep-submicron MOSFET model, are compared
Keywords :
MOSFET; SPICE; circuit analysis computing; semiconductor device models; AC aspects; BSIM3; DC aspects; MOS9; SPICE models; analog applications; circuit simulation; deep-submicron MOSFET modeling; digital applications; test procedures; Circuit simulation; Circuit testing; Computational modeling; Foundries; Integrated circuit modeling; MOSFET circuits; Production; SPICE; Switching circuits; Tuned circuits;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496374
