Fabrication and characteristics of sub-micrometer vertical type organic semiconductor copper phthalocyanine thin film transistor

The sub-micrometer vertical type current channel of semi-conductive Al gate organic semiconductor copper phthalocyanine thin film transistor (VOTFT) with five layered structure of Au (Drain)/CuPc/Al(Gate)/CuPc/Au (Source) is fabricated by vacuum evaporation technique with organic semiconductor copper phthalocyanine (CuPc). As the thickness of semi-conductive Al thin film is approximately 20nm, the carriers emitted from source electrode tunnel through CuPc/Al/CuPc double schottky barrier and formed the operating current of thin film transistors. The result shows that VOTFT have the characteristics of the unsaturated voltage and current similar with the bipolar mode static induction transistor, strong gate voltage capacity and high current density, operating current density can be achieved to 0.0972A/cm^-2. The dynamic small signal responsive frequency can be achieved to ~1000Hz.