• DocumentCode
    3536458
  • Title

    Dynamic temperature rise of shielded MR sensors during simulated electrostatic discharge pulses of variable pulse width

  • Author

    Eric, Igor ; Iben, T.

  • Author_Institution
    IBM Co., San Jose, CA, USA
  • fYear
    2004
  • fDate
    19-23 Sept. 2004
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    The temperature rise from Electrostatic discharge (ESD) of shielded AMR sensors used for magnetic tape storage devices is studied using square wave voltage pulses with widths from 35 ns to 2 ms. A phenomenological model has been developed to describe the dynamic stripe temperature versus pulse width and power for the time range studied as well as for a wide range in sensor geometries. The temperature required to melt the stripes was determined to be 1437 plusmn 69degC. The activation energy required to achieve a 2% increase in stripe resistance for pulses between 100 ns and 1 ms was determined to be 2.8 eV and is associated with interdiffusion of the stripe metals.
  • Keywords
    electrostatic discharge; magnetic heads; magnetic sensors; magnetic tape storage; thermal conductivity; activation energy; dynamic temperature rise; electrostatic discharge; interdiffusion; magnetic tape storage devices; shielded MR sensors; shielded magnetoresistive sensors; simulated electrostatic discharge pulses; square wave voltage pulses; stripe metals; stripe resistance; variable pulse width; Electrostatic discharge; Magnetic devices; Magnetic sensors; Magnetic shielding; Sensor phenomena and characterization; Solid modeling; Space vector pulse width modulation; Temperature distribution; Temperature sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
  • Conference_Location
    Grapevine, TX
  • Print_ISBN
    978-1-5853-7063-4
  • Electronic_ISBN
    978-1-5853-7063-4
  • Type

    conf

  • DOI
    10.1109/EOSESD.2004.5272812
  • Filename
    5272812