DocumentCode
3536458
Title
Dynamic temperature rise of shielded MR sensors during simulated electrostatic discharge pulses of variable pulse width
Author
Eric, Igor ; Iben, T.
Author_Institution
IBM Co., San Jose, CA, USA
fYear
2004
fDate
19-23 Sept. 2004
Firstpage
1
Lastpage
10
Abstract
The temperature rise from Electrostatic discharge (ESD) of shielded AMR sensors used for magnetic tape storage devices is studied using square wave voltage pulses with widths from 35 ns to 2 ms. A phenomenological model has been developed to describe the dynamic stripe temperature versus pulse width and power for the time range studied as well as for a wide range in sensor geometries. The temperature required to melt the stripes was determined to be 1437 plusmn 69degC. The activation energy required to achieve a 2% increase in stripe resistance for pulses between 100 ns and 1 ms was determined to be 2.8 eV and is associated with interdiffusion of the stripe metals.
Keywords
electrostatic discharge; magnetic heads; magnetic sensors; magnetic tape storage; thermal conductivity; activation energy; dynamic temperature rise; electrostatic discharge; interdiffusion; magnetic tape storage devices; shielded MR sensors; shielded magnetoresistive sensors; simulated electrostatic discharge pulses; square wave voltage pulses; stripe metals; stripe resistance; variable pulse width; Electrostatic discharge; Magnetic devices; Magnetic sensors; Magnetic shielding; Sensor phenomena and characterization; Solid modeling; Space vector pulse width modulation; Temperature distribution; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location
Grapevine, TX
Print_ISBN
978-1-5853-7063-4
Electronic_ISBN
978-1-5853-7063-4
Type
conf
DOI
10.1109/EOSESD.2004.5272812
Filename
5272812
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