Characterization of InGaN/GaN lasing structures for high temperature device applications

Summary form only given. We present a study of stimulated emission (SE) in optically pumped InGaN/GaN MQW samples at temperatures as high as 575 K. The 12 MQWs were grown by MOCVD. GaN barriers were intentionally doped with a Si concentration. The experiments were performed using the third harmonic (355 nm) of an injection-seeded Nd:YAG with a pulse width of 6 ns. The spontaneous emission and SE spectra are shown for the InGaN/GaN MQW sample at different temperatures. We also investigated the integrated photoluminescence intensity as a function of excitation power for different temperatures. The presented results show that InGaN/GaN MQWs have low temperature sensitivity of stimulated emission characteristics and are an attractive material for development of laser diodes that can operate well above room temperature.