Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stress

Author

Samanta, Piyas ; Sarkar, C.K.

Author_Institution

Dept. of Phys., Jadavpur Univ., Calcutta, India

fYear

1995

fDate

6-10 Nov 1995

Firstpage

260

Lastpage

262

Abstract

A theoretical analysis of metal-oxide-silicon (MOS) device degradation due to trapping of positive charges in thin (27, 33 nm) SiO ₂ gate oxides is presented. n⁺-polySi-gate (MOS) capacitors are stressed at a low electron injection fluence (<0.01 C/cm²) by Fowler-Nordheim (FN) electron tunneling from the quantized accumulation layer of ⟨100⟩ n-Si substrate, at constant current and constant applied gate voltage. The present analysis assumes tunneling electron initiated band-to-band impact ionization (BTBII) in SiO₂, as the possible source of trapped holes during stress. The validity of the present analysis has been examined by comparing the theoretical values with the experimental data of FN threshold voltage shift ΔV_FN of Fazan et al

Keywords

MOS capacitors; MOS integrated circuits; hole traps; impact ionisation; integrated circuit reliability; tunnelling; 27 nm; 33 nm; FN threshold voltage shift; Fowler-Nordheim stress; MOS capacitors; MOS device degradation; SiO₂; band-to-band impact ionization; constant applied gate voltage; constant current; electron injection fluence; electron tunneling; neutral hole traps; quantized accumulation layer; thin gate oxides; trapped holes; Cathodes; Charge carrier processes; Degradation; Electron traps; MOS capacitors; MOS devices; Physics; Thermal stresses; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496388

Filename

496388