• DocumentCode
    3536543
  • Title

    High field stress induced leakage current in 3.0-nm NO-grown gate dielectric films

  • Author

    Yao, Ze-Qiang ; Harrison, H.B. ; Dimitrijev, Sima ; Yeow, Y.T.

  • Author_Institution
    AWA Microelectron. Pty. Ltd., Homebush, NSW, Australia
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    270
  • Lastpage
    273
  • Abstract
    In this paper, stress induced leakage current (SILC) has been investigate in 3.0-nm nitric oxide (NO) grown gate dielectric films. MOS capacitors with 3.0-nm NO-grown films have much lower SILC compared to those reported results with N2O oxides or pure oxides under high field stresses
  • Keywords
    EPROM; MOS capacitors; MOS memory circuits; dielectric thin films; integrated circuit testing; leakage currents; 3 nm; EEPROMS; MOS capacitors; NO; SILC; gate dielectric films; high field stresses; stress induced leakage current; Australia; Dielectric films; EPROM; Electron traps; Leakage current; MOS capacitors; Microelectronics; Stress; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496391
  • Filename
    496391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536543