• DocumentCode
    3536553
  • Title

    Nitridation of sputtered silicon dioxide films

  • Author

    Jelenkovic, Emil V. ; Tong, K.Y.

  • Author_Institution
    Dept. of Electron. Eng., Hong Kong Polytech. Univ., Hung Hom, Hong Kong
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    It is shown that nitridation of sputtered oxide by reactive sputtering can give a hardened oxide-silicon interface with reduced interface states generation after stress. SIMS analysis has confirmed the existence of SiN peak close to the oxide/silicon interface. A stacked SiO2/SiOxNy structure is discussed relative to charge trapping, leakage current and mid-gap voltage shift
  • Keywords
    MIS devices; dielectric thin films; electron traps; interface states; leakage currents; nitridation; secondary ion mass spectroscopy; silicon compounds; sputtering; thin film transistors; SIMS analysis; SiO2-SiON; charge trapping; interface states generation; leakage current; mid-gap voltage shift; nitridation; reactive sputtering; Aluminum; Annealing; Interface states; Nitrogen; Semiconductor films; Silicon compounds; Sputtering; Stability; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496392
  • Filename
    496392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536553