Title :
CoSi2/SiGe contact formation by Co/a-SiGe/Si solid state reaction
Author :
Qi, W.J. ; Li, B.Z. ; Jiang, G.B. ; Huang, W.N. ; Gu, Z.G.
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi2/SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction
Keywords :
Ge-Si alloys; chemical interdiffusion; cobalt compounds; crystallisation; integrated circuit metallisation; semiconductor materials; semiconductor-metal boundaries; Co-SiGe-Si; Co/a-SiGe/Si solid state reaction; CoSi2-SiGe; CoSi2/SiGe contact formation; Ge rejection; SiGe crystallization; SiGe/Si solid phase hetero-epitaxy; interdiffusion; ternary interaction; Annealing; Gas detectors; Germanium silicon alloys; Ion beams; Schottky barriers; Silicon germanium; Solid state circuits; Sputtering; Surface treatment; Temperature;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496393
