Title :
Ultra-shallow junction formation using cobalt silicide as diffusion source
Author :
Kal ; Kasko ; Ryssel
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
Ultra-thin CoSi2 films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi2 on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (xj<100 nm) were characterized by fabricating diodes
Keywords :
arsenic; cobalt compounds; diffusion; elemental semiconductors; ion implantation; p-n junctions; rapid thermal annealing; silicon; sputtered coatings; CoSi2:As; RTA; RTP; Si:As; cobalt silicide; diffusion source; diode fabrication; furnace annealing; ion implantation; monocrystalline Si substrate; sputter deposited film; ultra-shallow junction formation; ultra-thin film; Annealing; CMOS technology; Cobalt; Contact resistance; Diodes; Furnaces; Semiconductor films; Silicides; Silicon; Sputtering;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496394
