The matrix field-emission structures based on carbon nanotubes for flat-panel displays

Author

Tarasov, E.A. ; Torgashov, G.V. ; Grigoriev, Yuri A. ; Sinitsyn, N.I. ; Aban´shin, N.P. ; Gorfinkel, B.I.

Author_Institution

Saratov Branch, Kotel´nikov Inst. of Radio Eng. & Electron., Saratov, Russia

fYear

2012

fDate

19-20 Sept. 2012

Firstpage

83

Lastpage

86

Abstract

The synthesis of carbon nanotubes (CNTs) in the holes was carried out by TCVD-method with using metal Fe-catalyst. The holes of depth of ~ 7 μm were obtained in the tripartite structure Si/SiO₂/Cr by means of conventional photolithography. The matrix period is 25 μm, the area of each square "window" in the layer of Cr is 100 μm². The field-emission current density of 26 μA/cm² was registered at applied electric field of 4 - 5 V/μm. Such structures will be used to create matrix cathodes for field-emission displays.

Keywords

carbon nanotubes; catalysts; cathodes; chromium; current density; elemental semiconductors; field emission displays; flat panel displays; iron; photolithography; silicon; silicon compounds; CNT; Cr; Fe; Si; SiO₂; TCVD-method; carbon nanotube synthesis; field-emission current density; field-emission displays; flat-panel displays; matrix cathodes; matrix field-emission structures; metal iron-catalyst; photolithography; tripartite structure; Iron; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on

Conference_Location

Saratov

Print_ISBN

978-1-4673-2096-2

Type

conf

DOI

10.1109/APEDE.2012.6478023

Filename

6478023