Title :
The matrix field-emission structures based on carbon nanotubes for flat-panel displays
Author :
Tarasov, E.A. ; Torgashov, G.V. ; Grigoriev, Yuri A. ; Sinitsyn, N.I. ; Aban´shin, N.P. ; Gorfinkel, B.I.
Author_Institution :
Saratov Branch, Kotel´nikov Inst. of Radio Eng. & Electron., Saratov, Russia
Abstract :
The synthesis of carbon nanotubes (CNTs) in the holes was carried out by TCVD-method with using metal Fe-catalyst. The holes of depth of ~ 7 μm were obtained in the tripartite structure Si/SiO2/Cr by means of conventional photolithography. The matrix period is 25 μm, the area of each square "window" in the layer of Cr is 100 μm2. The field-emission current density of 26 μA/cm2 was registered at applied electric field of 4 - 5 V/μm. Such structures will be used to create matrix cathodes for field-emission displays.
Keywords :
carbon nanotubes; catalysts; cathodes; chromium; current density; elemental semiconductors; field emission displays; flat panel displays; iron; photolithography; silicon; silicon compounds; CNT; Cr; Fe; Si; SiO2; TCVD-method; carbon nanotube synthesis; field-emission current density; field-emission displays; flat-panel displays; matrix cathodes; matrix field-emission structures; metal iron-catalyst; photolithography; tripartite structure; Iron; Silicon;
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4673-2096-2
DOI :
10.1109/APEDE.2012.6478023
