DocumentCode :
3536629
Title :
Preliminary results on elimination of secondary phases in Cd1−xZnxTe using MVB growth
Author :
Datta, Amlan ; Jones, Kelly ; Swain, Santosh ; Lynn, Kelvin
Author_Institution :
Center for Mater. Res., Washington State Univ., Pullman, WA, USA
fYear :
2010
fDate :
Oct. 30 2010-Nov. 6 2010
Firstpage :
3918
Lastpage :
3922
Abstract :
Reducing the amount of secondary phases in as grown Cd1-xZnxTe material is one of the biggest challenges in modern crystal growth industry. Results of the post processing experiments as well as its short comes would be described in this paper. Consequences of various experiments performed to decrease the amount of secondary phases by changing the initial charge compositions and the growth parameters would be discussed and statistics would be shown.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; crystal growth from melt; semiconductor growth; wide band gap semiconductors; zinc compounds; Cd1-xZnxTe; MVB growth; annealing; charge compositions; crystal growth; modified vertical Bridgman growth; secondary phases; Annealing; Conductivity; Crystals; Detectors; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
ISSN :
1095-7863
Print_ISBN :
978-1-4244-9106-3
Type :
conf
DOI :
10.1109/NSSMIC.2010.5874549
Filename :
5874549
Link To Document :
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