Title :
Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage
Author :
Tsay, Wen-Chin ; Yen Ann Chen ; Hong, Jyh-Wong ; Chen, A. ; Lin, Willis T. ; Chang, Y.H. ; Hou, S.R. ; Hsu, S.L. ; Li, C.R. ; Tin, Hsien-Jen ; Chian, Song-Tsang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
Several 8×4 cm2 single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p+ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible
Keywords :
annealing; ion implantation; leakage currents; microsensors; microstrip components; p-i-n diodes; silicon radiation detectors; Si; Sirtl etch analysis; annealing; boron solid source predeposition; capacitor coupling; implantation damage; large-area silicon PIN microstrip sensors; leakage current; planar technology; polysilicon bias resistors; single-sided sensors; Boron; Capacitive sensors; Capacitors; Etching; Leakage current; Microstrip; Resistors; Silicon; Solids; Testing;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496420
