• DocumentCode
    3536927
  • Title

    Polysilicon emitter BICFET with super-current gain

  • Author

    Guo, W.L. ; Song, Y.X. ; Green, M.A. ; Movvej-Farshi, M.K.

  • Author_Institution
    Dept. of Electron. Eng., Tianjin Univ., China
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    The BICFET with an emitter structure of poly-Si(n+)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 106 at low current level and the explanation for this high G has been made
  • Keywords
    bipolar transistors; field effect transistors; silicon; tunnel transistors; Si; bipolar inversion channel field-effect transistor; poly-Si-insulator-semiconductor tunnel junction; polysilicon emitter BICFET; small-signal super-current gain; Australia; Charge carrier processes; Current density; Electron emission; Fabrication; Insulation; Microelectronics; Silicon; Temperature distribution; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496423
  • Filename
    496423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536927