DocumentCode :
3536927
Title :
Polysilicon emitter BICFET with super-current gain
Author :
Guo, W.L. ; Song, Y.X. ; Green, M.A. ; Movvej-Farshi, M.K.
Author_Institution :
Dept. of Electron. Eng., Tianjin Univ., China
fYear :
1995
fDate :
6-10 Nov 1995
Firstpage :
395
Lastpage :
398
Abstract :
The BICFET with an emitter structure of poly-Si(n+)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 106 at low current level and the explanation for this high G has been made
Keywords :
bipolar transistors; field effect transistors; silicon; tunnel transistors; Si; bipolar inversion channel field-effect transistor; poly-Si-insulator-semiconductor tunnel junction; polysilicon emitter BICFET; small-signal super-current gain; Australia; Charge carrier processes; Current density; Electron emission; Fabrication; Insulation; Microelectronics; Silicon; Temperature distribution; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
Type :
conf
DOI :
10.1109/TENCON.1995.496423
Filename :
496423
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3536927
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