• DocumentCode
    3536974
  • Title

    Simulation of Ge implanted SiGe-channel p-MOSFETs

  • Author

    Niu, Guo-fu ; Ruan, Gang

  • Author_Institution
    Dept. of Electron. Eng., Fudan Univ., Shanghai, China
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    412
  • Lastpage
    415
  • Abstract
    This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO2-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range
  • Keywords
    Ge-Si alloys; MOSFET; ion implantation; semiconductor device models; semiconductor materials; semiconductor process modelling; Ge dose; Ge implanted SiGe-channel; PMOSFET; SiGe; SiO2-Si; numerical simulation; optimum mask thickness; p-MOSFETs; p-channel devices; process feasibility analysis; threshold voltage; Bipolar transistors; Circuit simulation; Degradation; Doping; Fabrication; Germanium silicon alloys; MOSFET circuits; Performance analysis; Silicon germanium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496427
  • Filename
    496427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536974