Title :
An analytical model of hole confinement gate voltage range for SiGe-channel p-MOSFETs
Author :
Niu, Guo-fu ; Ruan, Gang
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
This paper describes an analytical model of hole confinement gate voltage range (Vhc) for SiGe-channel p-MOSFETs. The model shows that Vhc depends on threshold voltage, gate oxide to Si cap thickness ratio, Ge mole fraction at the top of SiGe channel, work function of gate material, and substrate doping. With device scaling and power supply reduction, the Si cap should be thinned by the same magnitude as the gate oxide to realize full bias range SiGe-channel operation. Various bulk and SOI SiGe p-MOSFETs are clarified to have the same hole confinement capability with threshold voltage adjusted to the value required by circuit application
Keywords :
Ge-Si alloys; MOSFET; semiconductor device models; semiconductor materials; silicon-on-insulator; work function; Ge mole fraction; SOI PMOSFETs; Si-SiO2; SiGe; SiGe-channel p-MOSFETs; analytical model; bulk PMOSFETs; gate material work function; gate oxide to Si cap thickness ratio; hole confinement capability; hole confinement gate voltage range; substrate doping; threshold voltage; Analytical models; Boron; Doping; Epitaxial layers; Germanium silicon alloys; MOSFET circuits; Power supplies; Semiconductor process modeling; Silicon germanium; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496428
