An analytical model of hole confinement gate voltage range for SiGe-channel p-MOSFETs

Author

Niu, Guo-fu ; Ruan, Gang

Author_Institution

Dept. of Electron. Eng., Fudan Univ., Shanghai, China

fYear

1995

fDate

6-10 Nov 1995

Firstpage

416

Lastpage

419

Abstract

This paper describes an analytical model of hole confinement gate voltage range (V_hc) for SiGe-channel p-MOSFETs. The model shows that V_hc depends on threshold voltage, gate oxide to Si cap thickness ratio, Ge mole fraction at the top of SiGe channel, work function of gate material, and substrate doping. With device scaling and power supply reduction, the Si cap should be thinned by the same magnitude as the gate oxide to realize full bias range SiGe-channel operation. Various bulk and SOI SiGe p-MOSFETs are clarified to have the same hole confinement capability with threshold voltage adjusted to the value required by circuit application

Keywords

Ge-Si alloys; MOSFET; semiconductor device models; semiconductor materials; silicon-on-insulator; work function; Ge mole fraction; SOI PMOSFETs; Si-SiO₂; SiGe; SiGe-channel p-MOSFETs; analytical model; bulk PMOSFETs; gate material work function; gate oxide to Si cap thickness ratio; hole confinement capability; hole confinement gate voltage range; substrate doping; threshold voltage; Analytical models; Boron; Doping; Epitaxial layers; Germanium silicon alloys; MOSFET circuits; Power supplies; Semiconductor process modeling; Silicon germanium; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496428

Filename

496428